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NTTFS5811NL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
40
35
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 40 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
1.5
1.7
2.2
V
Negative Threshold Temperature
Coefficient
V GS(TH) /T J
? 6
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
I D = 20 A
5.5
6.7
m W
V GS = 4.5 V
I D = 20 A
8.3
10
Forward Transconductance
g FS
V DS = 5 V, I D = 10 A
24.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
1570
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
215
157
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 32 V, I D = 10 A
31
nC
V GS = 4.5 V, V DS = 32 V, I D = 10 A
18
Threshold Gate Charge
Q G(TH)
1
nC
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q GS
Q GD
V GS = 4.5 V, V DS = 32 V, I D = 10 A
5
10
Plateau Voltage
Gate Resistance
V GP
R G
3
0.61
V
W
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
11
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 32 V,
I D = 10 A, R G = 2.5 W
30
21
12
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 10 A
T J = 25 ° C
T J = 125 ° C
0.74
0.58
1.2
V
Reverse Recovery Time
t RR
21
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 10 A
11
10
Reverse Recovery Charge
Q RR
12
nC
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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